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| 2SK974(L), 2SK974(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 23 2SK974(L), 2SK974(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID ID(peak)* IDR Pch* Tch Tstg 2 1 Ratings 60 20 3 12 3 20 150 -55 to +150 Unit V V A A A W C C 2 2SK974(L), 2SK974(S) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) 60 20 -- -- 1.0 -- Typ -- -- -- -- -- 0.15 0.20 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 2.4 -- -- -- -- -- -- -- -- -- 4.0 400 230 60 5 25 180 75 0.9 85 Max -- -- 10 100 2.0 0.18 0.25 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns IF = 3 A, VGS = 0 IF = 3 A, VGS = 0, diF/dt = 50 A/s ID = 2 A, VGS = 10 V, RL = 15 Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2 A, VGS = 10 V * ID = 2 A, VGS = 4 V * VDS = 10 V, VGS = 0, f = 1 MHz 1 1 Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state resistance ID = 2 A, VDS = 10 V * 1 3 2SK974(L), 2SK974(S) Power vs. Temperature Derating 30 Channel Dissipation Pch (W) 100 30 Drain Current ID (A) 20 10 3 1.0 0.3 0 50 100 Case Temperature TC (C) 150 Maximum Safe Operation Area 10 0.1 0.1 0.3 1.0 3 10 30 100 Drain to Source Voltage VDS (V) is ) 10 s th (on in DS 10 n io y R 0 t PW s ra b = pe d 10 DC O mite ms i l Op (1 er Sh at ot) ion (T C= Ta = 25C 25 C ) 1 s m ar ea is Typical Output Characteristics 10 10 V 5V 4V 3.5 V 6 3V Drain Current ID (A) Pulse Test 10 Typical Transfer Characteristics 8 Drain Current ID (A) 8 VDS = 10 V Pulse Test 6 4 4 -25C TC= 25C 2 2.5 V VGS = 2 V 2 75C 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) () 1.0 0 1 2 3 4 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 5 Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 5A 5 2 1.0 0.5 0.2 0.1 0.05 0.2 VGS = 4 V 10 V Pulse Test 0.8 0.6 0.4 2A 0.2 ID = 1 A 0 2 4 6 8 10 Gate to Source Voltage VGS (V) 0.5 1.0 2 5 10 Drain Current ID (A) 20 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Forward Transfer Admittance yfs (S) 0.5 10 Pulse Test Forward Transfer Admittance vs. Drain Current VDS = 10 V 5 Pulse Test 2 1.0 0.5 -25C TC = 25C 0.4 ID = 5 A 1 A, 2 A VGS = 4 V 5A 1 A, 2 A 0.1 VGS = 10 V 0.3 75C 0.2 0.2 0.1 0.05 0 -40 0 40 80 120 Case Temperature TC (C) 160 0.1 2 0.2 0.5 1.0 Drain Current ID (A) 5 4 2SK974(L), 2SK974(S) Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test 10000 3000 Capacitance C (pF) 1000 Ciss 300 100 Crss 30 10 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 20 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Coss VGS = 0 f = 1 MHz Typical Capacitance vs. Drain to Source Voltage 200 100 50 20 10 5 0.2 Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) 80 20 Gate to Source Voltage VGS (V) 16 500 Switching Characteristics td (off) 200 Switching Time t (ns) 100 tf * * VDD = 50 V 25 V 10 V 60 VDS 40 20 25 V 10 V 0 4 VDD = 50 V 12 VGS ID = 3 A 8 4 50 VGS = 10 V VDD = 30 V PW = 2 s, duty < 1 % 20 10 5 0.1 tr td (on) 0.2 0.5 1.0 2 Drain Current ID (A) 5 10 8 12 16 Gate Charge Qg (nc) 0 20 5 2SK974(L), 2SK974(S) Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current IDR (A) 8 Pulse Test 6 10 V 15 V 4 5V 2 VGS = 0, -5 V 0 0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 D=1 0.5 0.3 0.1 0.2 0.1 TC = 25C 0.05 0.02 ch-c (t) = s (t) * ch-c ch-c = 6.25C/W, TC = 25C PDM 0.03 0.01 10 ls 0.01 ot Pu h 1S e PW T 1m 10 m Pulse Width PW (s) 100 m 1 D =PW T 100 10 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vin Vout 50 Vin = 10 V . VDD = 30 V . td (on) 90 % tr 90 % td (off) tf 10 % 10 % 10 % Wavewforms 90 % 6 2SK974(L), 2SK974(S) Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 7 |
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